Growth condition dependences of optical properties of InAsSbN single quantum wells (SQWs) grown on InP substrates by molecular beam epitaxy (MBE) for 2-μm-wavelength region were studied. The results for Sb composition dependences indicate that the optimum Sb composition at the growth temperature of 480 °C is 2% in the case that the nitrogen composition is 1%. Also, it was found that the PL peak shifts to longer wavelength side with decreasing the growth temperature from 480 °C to 450 °C, suggesting that the longer wavelength laser operation is possible with the growth temperature of 450 °C. In fact, laser operation was achieved for the laser diode structure grown at 450 °C. The lasing wavelength is 2.36 μm at 220 K, which is the longest wavelength for InAsSbN quantum well lasers grown on InP substrates.
► InAsSbN single quantum wells grown on InP substrates byMBE were studied.
► Optimum Sb composition is 2% in the case that the nitrogen composition is 1%.
► Laser operation was achieved for the InAsSbN SQW laser diode structure at 2.36 μm at 220 K.
Source:Journal of Crystal Growth