Growth
condition dependences of optical properties of InAsSbN single quantum wells
(SQWs) grown on InP substrates by molecular beam epitaxy (MBE) for
2-μm-wavelength region were studied. The results for Sb composition dependences
indicate that the optimum Sb composition at the growth temperature of
480 °C is 2% in the case that the nitrogen composition is 1%. Also, it was
found that the PL peak shifts to longer wavelength side with decreasing the
growth temperature from 480 °C to 450 °C, suggesting that the longer
wavelength laser operation is possible with the growth temperature of
450 °C. In fact, laser operation was achieved for the laser diode
structure grown at 450 °C. The lasing wavelength is 2.36 μm at
220 K, which is the longest wavelength for InAsSbN quantum well lasers
grown on InP substrates.
Highlights
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InAsSbN single quantum wells grown on InP substrates byMBE were studied.
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Optimum Sb composition is 2% in the case that the nitrogen composition is 1%.
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Laser operation was achieved for the InAsSbN SQW laser diode structure at
2.36 μm at 220 K.
Source:Journal
of Crystal Growth
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