Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate

We have grown GaAs antidots in InAs matrix on (100) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and 2.5 ML For 2.5 mML GaAs deposition, the grown antidots have a size of about 15–35nm in base diameter and about 2–4nm in height with a density about 3–4×10¹⁰cm^-2.

Source: Physica E: Low-dimensional Systems and Nanostructures

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