AlAs_ySb_1−y and InAs_ySb_1−y ternaries have been grown by Molecular Beam Epitaxy on (001) GaAs and (001) InAs substrates. Growth parameters and composition of the layers were determined by reflection high-energy electron diffraction and single-crystal X-ray diffraction measurements, respectively. The compositional dependence of AlAs_ySb_1−y and InAs_ySb_1−y on the ratio of Sb₄ to As₂ (or As₄) fluxes as well as on the substrate temperature has been investigated and can be explained qualitatively. The `smoothing' effect of Sb during the growth has been observed.

Source: Thin Solid Films

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