Highlights• InGaAs (=0.82) detectors with the cut-off wavelength of 2.5 μm grown by low pressure chemical vapor deposition (LP-MOCVD).
• The defects structure of a ternary epitaxial layer as discussed deeply.
• Various types of defects such as stacking faults as well as 60° and 90° threading dislocations were identified near interface.
• The plastic relaxation of strained heterostructures was incompletely strain relaxed by the formation and multiplication of misfit dislocations (MDs).
Source:Current Applied Physics