The heterointerfaces in InAs and InSb thin films grown on
GaAs were found to affect the temperature dependence of the film's electrical
properties such as electron mobility, electron density, and resistivity. The
InAs and InSb surfaces of the films, which act as heterointerfaces with air,
were found to similarly affect the electrical properties. It was found that the
electron mobility of both InAs and InSb films grown on GaAs substrates has a
three-layer structure.
Source:Journal
of Crystal Growth
If
you need more information about Transport properties of InSb and InAs thin
films on GaAs substrates , please visit our website:http://www.qualitymaterial.net,
send us email at powerwaymaterial@gmail.com.
No comments:
Post a Comment