Waveguide-based photodiodes with photoresponse in a broad wavelength range are grown on InAssubstrates by molecular beam epitaxy. Detection of visible and near-infrared radiation is achieved using a waveguide core formed by a GaSb-pn diode; coupled InAs-GaSb heterostructures forming a superlattice serve as absorption region for mid-infrared radiation. An increase of the photoresponse and detectivity more than one order of magnitude is observed for edge coupling in comparison to nearly perpendicular incidence of the radiation. Room temperature photoresponse is Rλ=5.32 A/W, detectivity D*=6.0×1010 cm·Hz12//W for a wavelength of λ=1.064 μm while Rλ=0.01 A/W and D*=1.0×108cm·Hz12//W for λ=3.062 μm.
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