Highlights
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- Wafer bowing control of free-standing heteroepitaxial diamond (100) films
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- Effect of patterned nucleation and growth (PNG) technique on wafer bowing reduction
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- Influence of nucleation region patterns of PNG on wafer bowing
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- Internal stress analysis of PNG films via confocal micro-Raman spectroscopy
Abstract
The potential of patterned nucleation growth (PNG) technique to control the wafer bowing of free-standing heteroepitaxial diamond films was investigated. The heteroepitaxial diamond (100) films were grown on an Ir(100) substrate via PNG technique with different patterns of nucleation regions (NRs), which were dot-arrays with 8 or 13 μm pitch aligned to < 100 > or < 110 > direction of the Ir(100) substrate. The wafer bows and the local stress distributions of the free-standing films were measured using a confocal micro-Raman spectrometer. For each NR pattern, the stress evolutions within the early stage of diamond growth were also studied together with a scanning electron microscopic observation of the coalescing diamond particles. These investigations revealed that the NR pattern, in terms of pitch and direction of dot-array, strongly affects the compressive stress on the nucleation side of the diamond film and dominantly contributes to the elastic deformation of the free-standing film. This indicates that the PNG technique with an appropriate NR pattern is a promising solution to fabricate free-standing heteroepitaxial diamond films with extremely small bows.
Abbreviations
- PNG, patterned nucleation growth;
- NR, nucleation region;
- CVD, chemical vapor deposition;
- FWHM, full width at half maximum;
- TEC, thermal expansion coefficient;
- RT, room temperature
Keywords
- Heteroepitaxial diamond;
- Chemical vapor deposition;
- Free-standing film;
- Patterned nucleation growth;
- Micro-Raman spectroscopy
- SOURCE:SCIENCEDIRECT
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