- •Tensile GaInP LD wafer was grown on 10°, 15° and 22° misoriented GaAs substrates.
- •Layer strain mismatch decreases with the increasing of misorientation angle.
- •Hole concentration in AlInP decreases with the increasing of misorientation angle.
- •Thickness of LD wafer increases with the increasing of misorientation angle.
- •22° GaAs substrate isn't suitable for growing tensile GaInP LD wafer.
- Three tensile GaInP quantum well laser diode wafers were grown in the same run by low-pressure metalorganic vapor phase epitaxy on GaAs substrates misoriented by 10°, 15°, and 22° toward (1 1 1)A respectively. The photoluminescence peak wavelength and intensity of the active region, the strain mismatch and the doping carrier concentration of the epitaxial layers, the whole thickness and the surface morphology of the wafers were all found to be strongly dependent on the misorientation of the substrates. Considering the comprehensive effects of material, electrical, and optical properties, the 15° substrate was superior to the 10° substrate for the growth of shorter wavelength red-light laser diode wafer, while substrate with too large misorientation of 22° was not a good choice for the epitaxy of red-light laser diode wafer.
- Keywords: MOVPE; GaInP; AlInP; Laser diode; Misorientation
- Source: Sciencedirect
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