We developed an effective graphene transfer method for
graphene or silicon Schottky diodes on a wafer as large as 6 inches. Graphene
grown on a large scale substrate was passivated and sealed with a gold layer,
protecting graphene from any possible contaminant and keeping good electrical
contact. The Au/graphene was transferred by the tension-assisted transfer
process without polymer residues. The gold film itself was used directly as the
electrodes of a Schottky diode. We demonstrated wafer-scale integration of
graphene/silicon Schottky diode using the proposed transfer process. The
transmission electron microscopy analysis and relatively low ideality factor of
the diodes indicated fewer defects on the interface than those obtained using
the conventional poly(methyl methacrylate)-assisted transfer method. We further
demonstrated gas sensors as an application of graphene Schottky diodes.
Source:IOPscience
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