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PAM-XIAMEN, a wafer substrate supplier, offers epi ready substrate wafer as follows:

Wikipedia:

Substrate is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second substance adheres. In solid-state electronics, this term refers to a thin slice of material such as silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide (GaAs), an alloy of silicon and germanium, or indium phosphide (InP). These serve as the foundation upon which electronic devices such as transistors, diodes, and especially integrated circuits (ICs) are deposited.

In the manufacture of ICs, the substrate material is usually formed into or cut out as thin discs called wafers, into which the individual electronic devices (transistors, etc.) are etched, deposited, or otherwise fabricated.

Epi substrate wafer:

1)SiC substrate 2”,3”,4”

Orientation :0°/4°±0.5°

Single Crystal 4H/6H

Thickness   (250 ± 25) μm         (330 ± 25) μm         (430 ± 25) μm

Type:N/SI

Dopant:Nitrogen/V

Resistivity (RT): 0.02 ~ 0.1 Ω·cm/>1E5 Ω·cm

FWHM: A<30 arcsec                   B/C/D <50 arcsec

Packaging：Single wafer box or multi wafer box

2)GaN substrate 1.5",2”,3",4"6"

Free-standing (gallium nitride) GaN Substrate

Orientation:C-axis(0001)+/-0.5°

Thickness:350um

Resistivity(300K): <0.5Ω·cm     >106Ω·cm

Dislocation Density:<5x106cm-2

TTV:<=15um

BOW:<=20um

Surface Finish:Front Surface:Ra<0.2nm.Epi-ready polished

3)Germanium substrate  2”,3”,4”

Orientation : <100> +/- 0.5 degree

Type / Dopant : N / Sb; P / Ga

Diameter : 100 mm

Thickness : 525 +/- 25 um

Resistivity : 0.1 ~ 40  ohm-cm

Primary flat location : <110>+/-0.5 degree

Primary flat length : 32.5 +/-2.5 mm

Front surface : Polished

Back surface : Etched

Edge surface finishing : cylindrical ground

Surface roughness  ( Ra ) : <=5A

EPD : <= 5000 cm-2

Epi ready : yes

Package : Single wafer container

4)CdZnTe substrate (15mm*15mm±0.05mm(25mm*25mm±0.05mm,30mm*30mm±0.05mm)

Orientation (111)B,(211)B

Thickness:

Doped:Undoped

Resistivity:≥1MΩ.cm

EPD≤1x105/cm3

Double side polished

5)GaAs substrate wafer 2”,3”,4”,6”

Thickness:220~500m

Conduction Type:SC/n-type

Growth Method:VGF

Dopant:Silicon/Zn

Orientation:(100)20/60/150 off (110)

Resistivity at RT:(1.5~9)E-3 Ohm.cm

Packaging：Single wafer container or cassette 2" LT-GaAs  Thickness：1-2um or 2-3um Resistivity(300K)：>108 Ohm-cm Polishing：Single side polished (GaAs)Gallium Arsenide Wafers for LED/LD/Microelectronics/ Applications,

6)Substrate silicon wafer

Growing method:FZ/CZ

Orientation:<111>/<100>

Off-orientation:4±0.5 degree to the nearest <110>

Type/Dopant:P/Boron,N/Phosphorus

Resistivity:10-20 W.cm/0.1-1 W.cm

RRV:≤15% (Max edge-Cen)/Cen

7)Sapphire substrate wafer 2",3",4"

Conduction Type:N-type /Semi-insulating/P

Dopant:Si doped or undoped/Fe/Mg

Thickness:4um,20um,30um,50um,100um

Orientation:C-axis(0001)+/-1°

Resistivity(300K):<0.05Ω·cm

Dislocation Density:<1x10^8cm-2

Substrate Structure: GaN on Sapphire(0001)

Surface Finish:Single or Double Side Polished,epi-ready

Usable Area :≥ 90 %

8)InP substrate 1",2",3",4"

Orientation:(111)

Thickness:300-500um

Type/Dopant：N/P/Si,Zn/Undoped/Fe

Resistivity:>1E7

9)InAs substrate

Orientation:(110)

Diameter:40.0mm,50.8mm

Thickness:500um,400um

Type  Dopant:P,N/S,N/Te

Orientation:(111)B

Diameter:50.8mm

Thickness:N/A

Type  Dopant:N/S

Nc:(1-3)E18a/cm3

Related Products: Sapphire wafer, Si wafer ZnO wafer MgO wafer SiC substrate GaAs epi wafer GaN epi wafer GaN on Si GaN on SiC GaN on Sapphire SOURCE:PAM-XIAMEN

If you need more information about substrate wafer, please visit our website:http://www.qualitymaterial.net , send us email at powerwaymaterial@gmail.com.