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GaN HEMT Epitaxial wafer

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GaN HEMT Epitaxial Wafer   Description Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology. Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon, and AlGaN/GaN on sapphire template. Nitride HEMTs are [...]

GaN based LED Epitaxial Wafer

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GaN Based LED Epitaxial Wafer   Description We provide LED wafers which are produced with epitaxial growth using our MOCVD technology. The products line-up of UV emission, blue emission, green emission and red emission: UV: 365-405nm; White: 445-460nm; Blue: 465-475nm; Green: 510-530nm; Red: 620-630nm; Our advantages at a [...]

GaN(Gallium Nitride ) Templates

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GaN(Gallium Nitride ) Templates Description GaN technology today is important technology player- Gallium Nitride on Silicon Carbide (GaN on SiC), Gallium Nitride on Silicon (GaN on Si) and Gallium Nitride on Sapphire (GaN on Sapphire). They are used in LED, RF and microwave devices. We [...]

Gallium Nitride Substrates

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Gallium Nitride Substrates   Description PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer  which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. Our advantages at a glance Advanced epitaxy [...]