SiC(Silicon Carbide) Epitaxy


Silicon Carbide Epitaxy   Description We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, GTO, and [...]

Silicon Carbide Wafers


Silicon Carbide Wafers   Description PAM-XIAMEN  offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology, established a production line to manufacturer SiC substrate, which is applied in GaN epitaxy device, power devices, [...]